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| DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2139 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2139 is N-Channel Power MOS Field Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeters) 10.00.3 3.20.2 4.50.2 2.70.2 FEATURES * Low On-Resistance 15.00.3 RDS(on) = 1.5 MAX. (VGS = 10 V, ID = 2.5 A) * Low Ciss Ciss = 930 pF TYP. * High Avalanche Capability Ratings * Isolate TO-220 (MP-45F) Package ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* Total Power Dissipation (Tc = 25 C) Total Power Dissipation (TA = 25 C) Channel Temperature Storage Temperature Single Avalanche Current** Single Avalanche Energy** * PW 10 s, Duty Cycle 1 % VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAS EAS 600 30 5.0 20 35 2.0 150 5.0 8.3 V V A A W W C 30.1 40.2 0.70.1 2.54 1.30.2 1.50.2 2.54 13.5MIN. 12.00.2 2.50.1 0.650.1 1. Gate 2. Drain 3. Source -55 to +150 C A mJ 123 MP-45F (ISOLATED TO-220) Drain ** Starting Tch = 25 C, RG = 25 , VGS = 20 V 0 Body Diode Gate Source Document No. TC-2512 (O. D. No. TC-8071) Date Published January 1995 P Printed in Japan (c) 1995 2SK2139 ELECTRICAL CHARACTERISTICS (TA = 25 C) CHARACTERISTIC Drain to Source On-state Resistance Gate to Source Cutoff Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge SYMBOL RDS(on) VGS(off) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr 930 200 40 20 10 60 12 30 6.0 15 1.0 320 1.4 2.5 1.5 100 100 MIN. TYP. 1.1 MAX. 1.5 3.5 UNIT V S TEST CONDITIONS VGS = 10 V, ID = 2.5 A VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 2.5 A VDS = 600 V, VGS = 0 VGS = 30 V, VDS = 0 VDS = 10 V VGS = 0 f = 1 MHz VGS = 10 V VDD = 150 V ID = 2.5 A, RG = 10 RL = 60 VGS = 10 V ID = 5.0 V VDD = 450 V IF = 5.0 A, VGS = 0 IF = 5.0 A di/dt = 50 A/s A nA pF pF pF ns ns ns ns nC nC nC V ns C Test Circuit 1 Avalanche Capability D.U.T. RG = 25 PG VGS = 20 - 0 V 50 Test Circuit 2 Switching Time D.U.T. L VDD PG. RG RG = 10 RL VGS Wave Form VGS 0 10 % VGS (on) 90 % VDD ID 90 % 90 % ID BVDSS IAS ID VDD VDS VGS 0 t t = 1us Duty Cycle 1 % ID Wave Form 0 10 % td (on) ton tr td (off) toff 10 % tf Starting Tch Test Circuit 3 Gate Charge D.U.T. IG = 2 mA PG. 50 RL VDD The application circuits and their parameters are for references only and are not intended for use in actual design-in's. 2 2SK2139 TYPICAL CHARACTERISTICS (TA = 25 C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 dT - Percentage of Rated Power - % PT - Total Power Dissipation - W 80 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 80 60 60 40 40 20 20 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 TC - Case Temperature - C FORWARD BIAS SAFE OPERATING AREA 100 V) ID (pulse) TC - Case Temperature - C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Pulsed ID - Drain Current - A 10 1.0 V at d( ite ID (DC) im )L (on Po S w RD er Di GS 10 ss 10 10 0 s s 1m s = ID - Drain Current - A = 20 10 PW VGS = 20 V 10 V 8V 6V 10 ipa tio n m 0 s 5 m s d Lim 0.1 1 TC = 25 C Single Pulse 10 ite 100 1 000 0 5 VDS - Drain to Source Voltage - V 10 VDS - Drain to Source Voltage - V DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE 50 Tch = 125 C 75 C 25 C -25 C 10 ID - Drain Current - A 1.0 VDS = 10 V Pulsed 0 5 10 VGS - Gate to Source Voltage - V 3 2SK2139 TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth (ch-c) (t) - Transient Thermal Resistance - C/W 1 000 100 10 1 0.1 0.01 TC = 25 C Single Pulse 0.001 10 100 1m 10 m 100 m 1 10 100 1 000 Rth (ch-c) = 3.57 (C/W) Rth (ch-a) = 62.5 (C/W) PW - Pulse Width - s FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT | yfs | - Forward Transfer Admittance - S 10 Tch = -25 C 25 C 75 C 125 C 1.0 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE Pulsed 2.0 ID = 5 A 2.5 A RDS (on) - Drain to Source On-State Resistance - 1.0 VDS = 10 V Pulsed 0.1 1.0 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT Pulsed 100 0 4 8 12 16 20 VGS - Gate to Source Voltage (V) GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE VGS (off) - Gate to Source Cutoff Voltage - V 4.0 RDS (on) - Drain to Source On-State Resistance - 4.0 3.0 2.0 VGS = 10 V 20 V 2.0 1.0 VDS = 10 V ID = 1mA 0 -50 0 1.0 10 ID - Drain Current - A 100 50 100 150 Tch - Channel Temperature - C 4 2SK2139 RDS (on) - Drain to Source On-State Resistance - DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 100 2.0 ISD - Diode Forward Current - A VGS = 10 V Pulsed Pulsed SOURCE TO DRAIN DIODE FORWARD VOLTAGE ID = 2.5 A 10 1.0 10 V 1.0 VGS = 0 V 0 -50 0 50 100 150 0.1 0 0.5 1.0 1.5 2.0 Tch - Channel Temperature - C CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10 000 Ciss, Coss, Crss - Capacitance - pF td (on), tr, td (off), tf - Switching Time - ns VGS = 0 V f = 1 MHz Ciss 1 000 VSD - Source to Drain Voltage - V SWITCHING CHARACTERISTICS tr 1 000 tf 100 td (on) td (off) 10 100 Coss Crss 10 1 0.1 1.0 10 100 VDS - Drain to Source Voltage - V 1 000 VDD = 150 V VGS = 10 V 1.0 RG = 10 1.0 10 ID - Drain Current - A 100 DYNAMIC INPUT CHARACTERISTICS 800 ID = ID (DC) VDS - Drain to Source Voltage - V 600 VDS = 450 V 300 V 150 V 12 10 400 VGS 200 VDS 8 6 4 2 20 30 0 40 VGS - Gate to Source Voltage - V 14 trr - Reverse Recovery Time - ns 600 16 800 REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT di/dt = 50 A/s VGS = 0 400 200 0 0.1 1.0 10 100 ID - Drain Current - A 0 10 Qg - Gate Charge - nC 5 2SK2139 SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD 10 IAS - Single Avalanche Current - A IAS = 5A EAS - Single Avalanche Energy - mJ 12 10 8 6 4 2 0 SINGLE AVALANCHE ENERGY vs. STARTING CHANNEL TEMPERATURE ID (peak)= ID (DC) VDD = 150 V EA S = 8.3 1.0 mJ RG = 25 VDD = 150 V VGS = 20 V 0 Starting Tch 0.1 100 1m 10 m 100 m 25 50 75 100 125 150 L - Inductance - H Starting Tch - Starting Channel Temperature - C 6 2SK2139 REFERENCE Document Name NEC semiconductor device reliability/quality control system. Quality grade on NEC semiconductor devices. Semiconductor device mounting technology manual. Semiconductor device package manual. Guide to quality assurance for semiconductor devices. Semiconductor selection guide. Power MOS FET features and application switching power supply. Application circuits using Power MOS FET. Safe operating area of Power MOS FET. Document No. TEI-1202 IEI-1209 IEI-1207 IEI-1213 MEI-1202 MF-1134 TEA-1034 TEA-1035 TEA-1037 The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 7 2SK2139 [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11 |
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